Growth of InP high electron mobility transistor structures with Te doping
نویسندگان
چکیده
InP high electron mobility transistor (HEMT) structures with In0.53Ga0.47As channels and In0.52Al0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50–100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000–10,000 cm/V-s and sheet densities of 1–4 10/cm. Fluorination studies showed similar behavior for Siand Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine. r 2005 Elsevier B.V. All rights reserved. PACS: 72.80.Ey; 73.61.Ey; 81.05.Ea; 81.15.Hi; 85.30.Tv
منابع مشابه
Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures
The effects of the channel electron density on the interband optical transitions of strained (x50.6 and 0.65! and lattice-matched (x50.53) InxGa12xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate est...
متن کامل14.2 Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies
We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies. INTRODUCTION InP based...
متن کاملInAs High-Electron Mobility Transistors on the Path to THz Operation
1. Introduction The invention of the High-Electron Mobility Transistor (HEMT) revolutionized the world of high-frequency electronics [1]. First on GaAs, then on InP and more recently on GaN, HEMTs have steadily achieved higher levels of performance in terms of high frequency gain, noise and power. Today, InAs HEMTs on InP exhibit the best balanced high-frequency response (high f T and high f ma...
متن کامل0.1 μm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications
Northrop Grumman Space Technology (NGST) has recently initiated process development for fabricating 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistor (HEMT) MMICs on 100 mm InP substrates. Successful development of this process will further reduce costs for InP HEMT MMICs and rival those of GaAs-based HEMT MMICs, including GaAs-based metamorphic HEMT technology, with superior performan...
متن کاملInP DHBT technology for 100 Gbit/s applications
TECHNOLOGY In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The MBE grown InP-based DHBTs with an emitter area of 1 × 4 μm exhibited peak cutoff frequencies (fT and fMAX) > 300 GHz, and a breakdown voltage (BVCEo) of ~ 5 V. The InP DHBT layer structures were grown on 3” semiinsulating InP substrat...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2005